Laser equipment

ABSTRACT

A laser equipment for outputting output lights having different wavelengths includes: a substrate; an excitation light generation element for emitting excitation lights including surface emitting laser elements and disposed on the substrate; and a light converter having a pair of second reflection layers and a solid laser medium layer, both of which provide a resonator. The solid laser medium layer is capable of generating lights having different peak wavelengths by receiving the excitation lights. The light converter is disposed on an output surface of the excitation light generation element.

CROSS REFERENCE TO RELATED APPLICATION

This application is based on Japanese Patent Application No. 2005-366899filed on Dec. 20, 2005, the disclosure of which is incorporated hereinby reference.

FIELD OF THE INVENTION

The present invention relates to a laser equipment.

BACKGROUND OF THE INVENTION

An optical parametric oscillator has been formerly used as the multiplewavelength laser device using light excitation. However, it is necessaryto mechanically adjust a laser incident angle to a nonlinear crystal soas to realize a multiple wavelength. Therefore, there is a problem inpoints of high speed formation and reproducibility of the wavelength.Further, a problem exists in that an optical system of many stages isrequired, and the device is large-sized. In contrast to this, forexample, JP-A-2003-243754 and JP-A-2002-151774 (corresponding to U.S.Pat. No. 6,636,537) are disclosed.

A multiple wavelength laser device shown in JP-A-2003-243754 is set to aconstruction in which Yb and Nd are added to a laser base material asrare earth ions, and plural lights of different wavelengths emitted fromion elements are selectively laser-oscillated by a multiple wavelengthselecting element. A multiple wavelength laser device shown in U.S. Pat.No. 6,636,537 is formed by constructing a resonant optical systemdifferent every wavelength.

Further, JP-A-2005-20002 (corresponding to U.S. Pat. No. 6,879,618)discloses a construction in which an organic active layer constituting avertical laser resonator is excited by incoherent light outputted froman organic light emitting diode as an excitation light source, and isresonated by a reflecting mirror and a laser beam is outputted. Theorganic active layer includes organic molecules of a host and a dopant,and the incoherent light is absorbed by a host material. Thereafter,excitation energy can be moved to the dopant by a Foerster type energymovement. Namely, the laser beam having a wavelength proper to thedopant is outputted.

Transition probability of rare earth is different in each element, andis also different in accordance with an energy level even within thesame element. Further, the reflectivity of the reflecting mirrorconstituting the resonator has wavelength dependence property.Accordingly, in the construction shown in JP-A-2003-243754, when theresonances of plural lights of different wavelengths are simultaneouslyexecuted, it is difficult to set light emitting intensity of eachwavelength to the same. For example, when the multiple wavelength laserdevice is set to an RGB light source for display, it is considered thatpolarization is caused in color. Further, since light sources forexciting Yb and Nd are individually required, it is difficult to makethe device compact.

In the case of the construction shown in U.S. Pat. No. 6,636,537, asmentioned above, since the resonant optical system different everywavelength is required, it is difficult to make the device compact.

Further, in the construction shown in U.S. Pat. No. 6,879,618, when itis considered that the resonances of plural lights of differentwavelengths are simultaneously executed, it is necessary to select ahost material and a dopant material suitable for each wavelength.Further, the excitation light source is required every each wavelength.Accordingly, it is difficult to make the device compact. Further, afterthe incoherent light is absorbed by the host material, excitation energyis moved to the dopant and light is emitted. Therefore, a problem existsin that conversion efficiency to the laser beam is low.

SUMMARY OF THE INVENTION

In view of the above-described problem, it is an object of the presentdisclosure to provide a laser equipment.

A laser equipment for outputting a plurality of output lights havingdifferent wavelengths includes: a substrate; an excitation lightgeneration element for emitting a plurality of excitation lights,wherein the excitation light generation element includes a plurality ofsurface emitting laser elements having a pair of first reflection layersand an activation layer disposed between the pair of first reflectionlayers, and wherein the surface emitting laser elements are disposed onthe substrate so that the surface emitting laser elements provide asurface emitting laser array; and a light converter having a pair ofsecond reflection layers and a solid laser medium layer disposed betweenthe pair of second reflection layers, wherein the pair of secondreflection layers and the solid laser medium layer provide a resonator.The solid laser medium layer is capable of generating a plurality oflights having different peak wavelengths by receiving the excitationlights, and the light converter is disposed on an output surface of theexcitation light generation element.

In the above equipment, the light converter is stacked on the excitationlight generation element. Thus, dimensions of the equipment are reduced.Further, the excitation lights emitted from the surface emitting laserarray is controlled with vertical mode control, so that a rare earth ionor a transition metal ion in the solid laser medium layer is activateddirectly so as to excite between energy levels thereof. Thus, the outputlights having different wavelengths are outputted from the equipmentwith high efficiency.

BRIEF DESCRIPTION OF THE DRAWINGS

The above and other objects, features and advantages of the presentinvention will become more apparent from the following detaileddescription made with reference to the accompanying drawings. In thedrawings:

FIG. 1 is a cross sectional view showing a laser equipment according toa first embodiment;

FIG. 2 is a schematic chart showing excitation and transition in a solidlaser medium layer;

FIG. 3 is a partially enlarged cross sectional view showing a secondreflection layer in the laser equipment;

FIG. 4 is a graph showing a relationship between a wavelength and areflectivity;

FIG. 5 is a graph showing a relationship between a difference ofrefraction index and a reflection bandwidth;

FIG. 6 is a cross sectional view showing a laser equipment according toa second embodiment;

FIG. 7 is a partially enlarged cross sectional view showing a laserequipment according to a third embodiment;

FIG. 8 is a partially enlarged cross sectional view showing a laserequipment according to a fourth embodiment;

FIG. 9 is a schematic chart showing excitation and transition in a solidlaser medium layer according to a fourth embodiment;

FIG. 10 is a partially enlarged cross sectional view showing a laserequipment according to a modification of the fourth embodiment;

FIG. 11 is a partially enlarged cross sectional view showing a laserequipment according to a fifth embodiment;

FIG. 12 is a partially enlarged cross sectional view showing a laserequipment according to a sixth embodiment; and

FIG. 13 is a partially enlarged cross sectional view showing a laserequipment according to a seventh embodiment.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS First Embodiment Mode

FIG. 1 is a cross-sectional view showing the schematic construction of amultiple wavelength laser device in accordance with a first embodimentmode. The multiple wavelength laser device includes an excitation lightgenerating section for outputting a laser beam as excitation light, anda wavelength converting section for receiving the excitation lightoutputted from this excitation light generating section and outputtinglight of a wavelength different from that of the excitation light. Themultiple wavelength laser device is constructed so as to output plurallights of different wavelengths to the device exterior.

As shown in FIG. 1, the excitation light generating section 110 includesat least a plane light emitting laser array constructed by formingplural plane light emitting laser elements on the same substrate. Inthis embodiment mode, the excitation light generating section 110 isconstructed by only the plane light emitting laser array. In thefollowing description, reference numeral 110 is also given to the planelight emitting laser array. A well-known structure can be adopted as theconstruction of the plane light emitting laser array 110.

Concretely, an Al_(z1)Ga_(1-z1)As/Al_(z2)Ga_(1-z2)As (0≦z1<≦z2≦1)multilayer reflecting film 112 added with an n-type dopant is formed onone face of an n-GaAs substrate 111. The multilayer reflecting film 112formed by laminating this Al_(z1)Ga_(1-z1)As layer and theAl_(z2)Ga_(1-z2)As layer is one of first reflecting layers (on anopposite output side of excitation light described later), and is shownbelow as a first reflecting layer 112.

An unillustrated AlGaAs clad layer, anAl_(x1)In_(y1)Ga_(1-x1-y1)AS/Al_(x3)In_(y3)Ga_(1-x3-y3)As multiplequantum well layer 113, and an unillustrated AlGaAs clad layer aresequentially laminated on the first reflecting layer 112. The multiplequantum well layer 113 formed by laminating theAl_(x1)In_(y1)Ga_(1-x1-y1)As layer and the Al_(x3)In_(y3)Ga_(1-x3-y3)ASlayer is an active layer, and is shown below as the active layer 113.The composition and the film thickness of the active layer 113 areadjusted so as to output a laser beam having a predetermined desirablelight emitting wavelength. In this embodiment mode, the active layer 113is formed such that an optical film thickness becomes one wavelength.The active layer 113 is adjusted such that the light emitting wavelengthis included in a range of 790 to 810 nm.

An Al_(z3)Ga_(1-z3)As/Al_(z4)Ga_(1-z4)As (0≦z3<z4≦1) multilayerreflecting film 114 added with a p-type dopant is formed on the AlGaAsclad layer. The multilayer reflecting film 114 formed by laminating thisAl_(z3)Ga_(1-z3)As layer and the Al_(z4)Ga_(1-z4)As layer is one (on theoutput side of excitation light described later) of first reflectinglayers, and is shown below as the first reflecting layer 114.

The film thickness of each layer constituting the first reflectinglayers 112, 114 of a multilayer structure is set to a value provided bydividing the light emitting wavelength by four times a refractive index.The refractive index is adjusted such that reflectivity of the firstreflecting layer 112 becomes greater than that of the first reflectinglayer 114 with respect to the laser beam (hereinafter shown asexcitation light) outputted from the active layer 113. Namely, aresonator is constructed by the first reflecting layer 112, the activelayer 113 and the first reflecting layer 114. The excitation lightoutputted from the active layer 113 is constructed so as to be resonatedby the first reflecting layers 112, 114 and be oscillated on the firstreflecting layer 114 side.

Each of the above layers can be formed by using a crystal growth methodsuch as well-known MOCVD (organic metal vapor phase growth) method, MBE(molecular beam epitaxy) method, etc. After the crystal growth, a planelight emitting laser element 115 is constructed via processes of mesaetching for element separation, formation of an insulating film,evaporation of an electrode film, etc. Namely, a plane light emittinglaser array 110 having plural plane light emitting laser elements 115one-dimensionally or two-dimensionally arranged on the n-GaAs substrate111 is constructed.

In FIG. 1, reference numeral 116 designates an insulating film (asilicon oxide film in this example) for strangulating light of ahorizontal direction (a substrate planar direction) and an electriccurrent. Reference numeral 117 designates a p-type electrode (Cr/Pt/Auin this example), and reference numeral 118 designates an n-typeelectrode (Au—Ge/Ni/Au in this example). As shown in FIG. 1, the p-typeelectrode 117 is electrically separated every plane light emitting laserelement 115. Namely, the individual plane light emitting laser element115 is constructed so as to be independently controlled.

Next, the wavelength converting section will be explained. As shown inFIG. 1, the wavelength converting section 120 includes at least a solidlaser medium layer 121, and second reflecting layers 122, 123respectively formed on excitation light input face and output face ofthe solid laser medium layer 121, and is laminated and arranged on anoutput face of the plane light emitting laser array 110 with the secondreflecting layer 122 as an abutting face. This embodiment mode ischaracterized in the construction of the second reflecting layers 122,123 with respect to the solid laser medium layer 121.

Concretely, a Nd:YAG (Y₃Al₅O₁₂) crystal is adopted as a constructionalmaterial of the solid laser medium layer 121, and the solid laser mediumlayer 121 is arranged so as to cover the entire output face of the planelight emitting laser array 110. As mentioned above, when the excitationlight adjusted within a range of 790 to 810 nm with respect to lightemitting wavelength λ₀ is received from the plane light emitting laserarray 110, as shown in FIG. 2, an electron is selectively excited duringthe energy level of an Nd ion added to the YAG crystal from ⁴I_(9/2) to⁴F_(5/2). Absorption is large from ⁴I_(9/2) to ⁴F_(5/2) and excitationcan be efficiently performed. FIG. 2 is a typical view showingexcitation and transition in the solid laser medium layer 121.

As shown in FIG. 2, the electron excited to energy level ⁴F_(5/2) isonce transited to ⁴F_(3/2) by non-radiant relaxation involving no lightemission, and is then respectively transited to ⁴I_(11/2), ⁴I_(13/2),and ⁴I_(15/2). In accordance with this transition, laser beams havingpeak wavelengths λ₁, λ₂, λ₃ within ranges of 900 to 950 nm (946 nm inthis example), 1040 to 1065 nm (1064 nm in this example) and 1300 to1350 nm (1319 nm in this example) in accordance with wavelength λ₀ ofthe excitation light are respectively generated. Namely, plural laserbeams of different peak wavelengths are outputted from the same solidlaser medium layer 121 by receiving the excitation light.

The second reflecting layers 122, 123 are divided into plural areas inaccordance with constructional differences, and are constructed so as tobe resonated at different peak wavelengths every area. For example, theconstruction of the second reflecting layers 122, 123 is at least one ofa constructional material (refractive index), a thickness and alaminating number (period).

Each of the second reflecting layers 122, 123 in accordance with thisembodiment mode is constructed by forming an Al₂O₃/TiO₂ multilayerreflecting film by a technique of evaporation, spatter, etc. As shown inFIG. 3, each of the second reflecting layers 122, 123 is divided intoareas 1 to 3 so as to be selectively resonated at a corresponding peakwavelength. In this embodiment mode, areas 1, 2 and 3 respectivelybecome areas selectively resonated at λ₁, λ₂ and λ₃. FIG. 3 is anenlarged cross-sectional view showing the construction of the secondreflecting layers 122, 123.

Concretely, a reflecting film 124 for λ₁, a reflecting film 125 for λ₂and a reflecting film 126 for λ₃ respectively adjusted with respect tothe film thickness of each layer constituting the Al₂O₃/TiO₂ multilayerreflecting film are laminated in an arbitrary order from the solid lasermedium layer 121 side so as to attain high reflection at the aboverespective peak wavelengths λ₁, λ₂, λ₃ on an output face of the solidlaser medium layer 121. In this embodiment mode, the reflecting filmsare laminated in the order of the reflecting film 124 for λ₁, thereflecting film 125 for λ₂ and the reflecting film 126 for λ₃. Further,the reflecting films are laminated on the excitation light input face ofthe solid laser medium layer 121 in an order from the solid laser mediumlayer 121 side reverse to the order onto the output face. In thisembodiment mode, the reflecting films are laminated in the order of thereflecting film 126 for λ₃, the reflecting film 125 for λ₂ and thereflecting film 124 for λ₁. After the lamination, in each of areas 1 to3, a useless reflecting film is removed by photolithography and etchingsuch that the reflecting layer attaining high reflection at thecorresponding peak wavelengths λ₁, λ₂, λ₃ becomes an outermost layer.The second reflecting layers 122, 123 are constructed in this way.Namely, in area 1, the reflecting film 125 for λ₂ and the reflectingfilm 126 for λ₃ on the output face are removed such that the reflectingfilm 124 for λ₁ becomes an outermost layer (a pair is formed). In area2, the reflecting film 126 for λ₃ on the output face and the reflectingfilm 124 for λ₁ on the excitation light input face are removed such thatthe reflecting film 125 for λ₂ becomes an outermost layer (a pair isformed). In area 3, the reflecting film 124 for λ₁ and the reflectingfilm 125 for λ₂ on the excitation light input face are removed such thatthe reflecting film 126 for λ₃ becomes an outermost layer (a pair isformed).

In this embodiment mode, the film thicknesses of the respective layers(Al₂O₃ layer and TiO₂ layer) constituting the respective reflectingfilms 124 to 126 are set to values provided by dividing thecorresponding peak wavelengths λ₁, λ₂, λ₃ by four times the refractiveindexes. Further, the reflectivities of the respective reflecting films124 to 126 with respect to lights of the corresponding peak wavelengthsλ₁, λ₂, λ₃ are set such that the second reflecting layer 123 of theoutput side becomes smaller than the second reflecting layer 122 of theexcitation light input side. Accordingly, the respective areas 1 to 3are resonated at the corresponding peak wavelengths λ₁, λ₂, λ₃ and laseroscillation can be performed from the second reflecting layer 123 side.

However, when a reflecting band (e.g., a wavelength width having 50% inreflectivity) showing high reflection in each of the reflecting films124 to 126 is wide and one portion of the reflecting band includes anadjacent peak wavelength (i.e., a central wavelength of the reflectingband), light of the adjacent peak wavelength is also partially resonatedtogether with the corresponding peak wavelength. Namely, no sufficientwavelength selecting property can be provided. Therefore, in thisembodiment mode, as shown in FIG. 4, reflecting bands Δ1, Δ2 (Δ2, Δ3)each showing high reflection are set to satisfy |λ₁−λ₂|>Δ1/2, (or|λ₂−λ₃|>Δ2/2 ) and |λ₂−λ₃|>Δ3/2, in reflecting films 124, 125 (125, 126)corresponding to adjacent peak wavelengths λ₁, λ₂ (λ₂, λ₃). Accordingly,the respective areas 1 to 3 are selectively resonated at thecorresponding peak wavelengths λ₁, λ₂, λ₃ and the laser oscillation canbe performed. FIG. 4 is a view showing reflecting characteristics of theAl₂O₃/TiO₂ multilayer reflecting film for explaining the centralwavelength and the reflecting band.

For example, as shown in FIG. 5, the reflecting band can be adjusted bythe refractive indexes of the reflecting films 124 to 126(constructional material). Namely, materials constituting the respectivereflecting films 124 to 126 may be suitably selected. In this embodimentmode, the above relation is set to be satisfied by setting theAl₂O₃/TiO₂ multilayer reflecting film (e.g., a refractive indexdifference is set to 0.57 or less such that reflecting bands Δ1, Δ2become 236 nm or less by setting λ₁:946 nm and λ₂:1064 nm). Namely, theresonators selectively resonated at peak wavelengths λ₁, λ₂, λ₃ areconstructed within the same plane. FIG. 5 is a view showing the relationof the refractive index difference and the reflecting band.

Thus, the multiple wavelength laser device 100 in this embodiment modeis set to a construction in which the construction of the secondreflecting layers 122, 123 is set to be different every areas 1 to 3 sothat the laser oscillation is performed by selectively resonating lightsof the corresponding peak wavelengths λ₁, λ₂, λ₃ every areas 1 to 3.Accordingly, light of a single wavelength outputted from the plane lightemitting laser array 110 is set to excitation light, and plural lightsof different wavelengths can be simultaneously outputted. For example,the construction of the second reflecting layer is at least one of aconstructional material (refractive index), a thickness and a laminatingnumber (period).

Further, plural resonators for selectively resonating lights of peakwavelengths λ₁, λ₂, λ₃ are constructed within the same plane by theconstruction of the second reflecting layers 122, 123. Accordingly, thephysical constitution of the device 100 can be made compact. Further, inthis embodiment mode, one plane light emitting laser array 110 is set tothe excitation light generating section, and one solid laser mediumlayer 121 is collectively excited, and the wavelength converting section120 is laminated and arranged on the plane light emitting laser array110 with the second reflecting layer 122 as an abutting face.Accordingly, the physical constitution of the device 100 can be mademore compact.

Further, the plane light emitting laser array 110 is adopted as theexcitation light generating section, and longitudinal mode control ofthe excitation light is executed. Hence, a portion between the energylevels of rare earth ions or transition metal ions added to the solidlaser medium layer 121 can be directly excited. Accordingly, conversionefficiency from turning-on electric power to the laser beam is high, andplural lights (laser beams) of different wavelengths can be efficientlyoutputted.

This embodiment mode shows an example in which areas 1 to 3 selectivelyresonated at the respective peak wavelengths λ₁, λ₂, λ₃ are constructedby the thicknesses (the film thicknesses of the Al₂O₃ layer and the TiO₂layer constituting each of the reflecting films 124 to 126) of therespective reflecting films 124 to 126 constituting the secondreflecting layers 122, 123. However, each of areas 1 to 3 may be alsoconstructed by changing a constructional material (refractive index) anda laminating number (period).

Further, this embodiment mode shows an example in which the secondreflecting layers 122, 123 are constructed by removing a uselessreflecting film so as to form only a pair of reflecting films requiredin the respective areas 1 to 3 after the respective reflecting films 124to 126 are collectively laminated in the respective areas 1 to 3. Inaccordance with such a construction, a manufacturing process can besimplified. However, the second reflecting layers 122, 123 may be alsoconstructed by respectively selectively forming only the reflecting film124 for λ₁, the reflecting film 125 for λ₂ and the reflecting film 126for λ₃ in the respective areas 1 to 3 by photolithography. In this case,the second reflecting layers 122, 123 can be flattened in comparisonwith this embodiment mode.

Further, this embodiment mode shows an example in which areas 1 to 3different in the construction of the second reflecting layers 122, 123are arranged correspondingly to the number of peak wavelengths generatedby the solid laser medium layer 121. However, the number of areas may bealso set to be plural so as to output plural lights of differentwavelengths. For example, it may be also set to a construction havingonly respective areas 1, 2 resonated at two peak wavelengths (e.g., λ₁,λ₂) among the three peak wavelengths λ₁, λ₂, λ₃.

Further, this embodiment mode shows an example in which the solid lasermedium layer 121 generates three lights of different peak wavelengths byreceiving the excitation light. However, if it is a construction forreceiving the excitation light and generating plural lights of differentpeak wavelengths, this construction can be adopted as the solid lasermedium layer 121.

Further, this embodiment mode shows an example in which theAl_(x1)In_(y1)Ga_(1-x1-y1)As/Al_(x3)In_(y3)Ga_(1-x3-y3)As multiplequantum well layer 113 is adopted as the active layer 113 constitutingthe plane light emitting laser element 115, and the Nd:YAG crystal isadopted as the solid laser medium layer 121. However, the constructionalmaterials of the active layer 113 and the solid laser medium layer 121can be suitably selected and adopted in accordance with the wavelengthoutputted from the device 100. For example, anIn_(x2)Ga_(1-x2)As_(y2)P_(1-y2)/In_(x4)Ga_(1-x4)As_(y4)P_(1-y4) multiplequantum well layer can be adopted as the active layer 113. Further, YAG,YVO(YVO₄), GVO(GdVO₄), GGO(Gd₃Ga₅O₁₂), SVAP(Sr₅(VO₄)₃F), FAP((PO₄)₃F),SFAP(Sr₅(PO₄)₃F), YLF(YLiF₄), etc. added with various kinds of rareearth ions or transition metal ions can be adopted as the solid lasermedium layer 121.

Further, this embodiment mode shows an example in which the wavelengthconverting section 120 is laminated and arranged on the plane lightemitting laser array 110 with the second reflecting layer 122 as anabutting face. However, it may be also set to a construction forseparating and arranging the wavelength converting section 120 on theplane light emitting laser array 110 (on the output face). However, whenthe wavelength converting section 120 is constructed so as to belaminated and arranged as shown in this embodiment mode, it may be mademore compact. Accordingly, the distance from the active layer 113 to thesolid laser medium layer 121 can be also shortened.

Second Embodiment Mode

Next, a second embodiment mode will be explained on the basis of FIG. 6.FIG. 6 is a cross-sectional view showing the schematic construction of amultiple wavelength laser device 100 in accordance with the secondembodiment mode.

The multiple wavelength laser device 100 in accordance with the secondembodiment mode is common to the multiple wavelength laser device 100shown in the first embodiment mode in many portions.

As shown in FIG. 6, the multiple wavelength laser device 100 inaccordance with this embodiment mode is characterized in that awavelength converting layer 127 laminated and arranged on the outputface of the solid laser medium layer 121 is included as the wavelengthconverting section 120. Plural laser beams having various wavelengthscan be combined by arranging the wavelength converting layer 127 in thisway.

In this embodiment mode, a nonlinear crystal for generating a secondhigher harmonic wave of the peak wavelength is adopted as aconstructional material of the wavelength converting layer 127. Awell-known material can be suitably selected and used as the nonlinearcrystal in accordance with an inputted wavelength. For example, thereare KTP (KTiOPO₄), LBO(LiB₃O₅), BiBO(BiB₃O₆), PPLTP (Periodically PoledKTP), etc.

Accordingly, lights having peak wavelengths λ₁, λ₂, λ₃ within ranges of900 to 950 nm, 1040 to 1065 nm and 1300 to 1350 nm of a near infraredarea generated from Nd ions and selectively resonated andlaser-oscillated by the second reflecting layers 122, 123 can beconverted into lights having wavelengths within ranges of 450 to 475 nm,520 to 533 nm and 650 to 675 nm as visible light by the wavelengthconverting layer 127. Namely, this light can be utilized as a lightsource for RGB. In particular, in this embodiment mode, plural lightshaving the respective colors of R, G and B can be simultaneouslyoutputted from the same face of one device 100.

FIG. 6 shows an example for arranging the wavelength converting layer127 between the solid laser medium layer 121 and the second reflectinglayer 123. However, it may be also set to a construction for laminatingand arranging the wavelength converting layer 127 on the secondreflecting layer 123.

Further, no constructional material of the wavelength converting layer127 is limited to the nonlinear crystal for generating the second higherharmonic wave. It is good if this constructional material is a materialable to convert the wavelength laser-oscillated from the resonator.

Third Embodiment Mode

Next, a third embodiment mode will be explained on the basis of FIG. 7.FIG. 7 is an enlarged cross-sectional view showing the schematicconstruction of a multiple wavelength laser device 100 in accordancewith the third embodiment mode.

The multiple wavelength laser device 100 in accordance with the thirdembodiment mode is common to the multiple wavelength laser device 100shown in the first embodiment mode in many portions.

As shown in FIG. 7, the multiple wavelength laser device 100 inaccordance with this embodiment mode is characterized in that a thirdreflecting layer 128 laminated and arranged on the output face of thesolid laser medium layer 121 and attaining high reflection at thewavelength of excitation light is included as the wavelength convertingsection 120. Thus, the excitation light (wavelength λ₀) is repeatedlyreflected (repeated) through the solid laser medium layer 121 betweenthe first reflecting layer 114 of the output side and the thirdreflecting layer 128 constituting the plane light emitting laser element115 by arranging the third reflecting layer 128. Accordingly, theexcitation light can be efficiently absorbed to the solid laser mediumlayer 121. Namely, conversion efficiency from turning-on electric powerto a laser beam (light outputted from the solid laser medium layer 121)can be improved.

Concretely, in the formation of the respective reflecting films 124 to126 shown in the first embodiment mode, it is sufficient to form therespective reflecting films 124 to 126 after a reflecting film 128 forλ₀ respectively adjusted with respect to the film thickness of eachlayer constituting the Al₂O₃/TiO₂ multilayer reflecting film is formedso as to attain high reflection at wavelength λ₀ of the excitation lighton the output face of the solid laser medium layer 121. Thus, if thereflecting film 128 for λ₀ is set to an innermost layer, the reflectingfilm 128 for λ₀ can be left on the entire output face of the solid lasermedium layer 121 even when an unnecessary reflecting film is removedafter each of the reflecting films 124 to 126 is laminated.

It is also possible to adopt a construction in which the constructionaccording to this embodiment mode and the wavelength converting layer127 shown in the second embodiment mode are combined.

Fourth Embodiment Mode

A fourth embodiment mode next be explained on the basis of FIG. 8. FIG.8 is an enlarged cross-sectional view showing the schematic constructionof a multiple wavelength laser device 100 in accordance with the fourthembodiment mode.

The multiple wavelength laser device 100 in accordance with the fourthembodiment mode is common to the multiple wavelength laser devices 100shown in the first to third embodiment modes in many portions.

As shown in FIG. 8, the multiple wavelength laser device 100 inaccordance with this embodiment mode is characterized in that thismultiple wavelength laser device 100 is constructed so as to outputplural lights of different wavelengths by a forming range (formationexistence) of the second reflecting layers 122, 123. Namely, it is,characterized in that the wavelength converting section 120 has area 4as a resonant area forming the second reflecting layers 122, 123, andarea 5 as an excitation light passing area not forming at least one ofthe second reflecting layers 122, 123 on the solid laser medium layer121.

In this embodiment mode, a Yb:YAG(Y₃Al₅O₁₂) crystal is adopted as aconstructional material of the solid laser medium layer 121, and thesolid laser medium layer 121 is arranged so as to cover the entireoutput face of the plane light emitting laser array 110. As shown inFIG. 9, when excitation light adjusted within a range of 900 to 985 nmin light emission wavelength λ₀ is received from the plane lightemitting laser array 110, an electron is selectively excited during theenergy level of a Yb ion added to the YAG crystal from ²F_(5/2) to²F_(7/2). FIG. 9 is a typical view showing excitation and transition inthe solid laser medium layer 121.

As shown in FIG. 2, the electron excited to energy level ²F_(7/2) istransited to ²F_(5/2). At this time, a laser beam having peak wavelengthλ₄ within a range of 1000 to 1085 nm is generated in accordance withwavelength λ₀ of the excitation light. Thus, light emission efficiencyis good since the excitation level and the light emitting level are thesame level.

Similar to the first embodiment mode, the second reflecting layers 122,123 are constructed by the Al₂O₃/TiO₂ multilayer reflecting film, andare selectively formed on the output face and the excitation light inputface of the solid laser medium layer 121 corresponding to area 4.Concretely, the second reflecting layers 122, 123 are constructed from areflecting film 129 for λ₄ adjusted in thickness (the film thickness ofeach of the Al₂O₃ layer and the TiO₂ layer) so as to be resonated atwavelength λ₄. As a forming method of the reflecting film 129 for 4 inarea 4, after the reflecting film 129 for λ₄ is formed on the entireface, the reflecting film 129 for λ₄ in area 5 forming no secondreflecting layers 122, 123 may be removed by etching, and the reflectingfilm 129 for λ₄ may be also selectively formed in only area 4. In area5, one portion of the excitation light is absorbed to the solid lasermedium layer 121, but is not resonated. Therefore, a great part of theexcitation light passes through the solid laser medium layer 121.

The construction of the plane light emitting laser array 110 is similarto that in the first embodiment mode, but the composition of theAl_(x1)In_(y1)Ga_(1-x1-y1)As/Al_(x3)In_(y3)Ga_(1-x3-y3)As multiplequantum well layer 113 constituting the active layer 113 is adjustedsuch that light emitting wavelength λ₀ lies within a range of 900 to 985nm so as to excite the Yb ion.

Thus, in accordance with the multiple wavelength laser device 100 inthis embodiment mode, light of wavelength λ₄ resonated andlaser-oscillated by the second reflecting layers 122, 123, and theexcitation light of wavelength λ₀ passing through the solid laser mediumlayer 121 can be simultaneously outputted. Namely, plural lights ofdifferent wavelengths can be simultaneously outputted.

Further, one plane light emitting laser array 110 is set to theexcitation light generating section (excitation light source) and onesolid laser medium layer 121 is collectively excited, and plural lightsof wavelengths different in accordance with the existence of the secondreflecting layers 122, 123 can be simultaneously outputted. Accordingly,the physical constitution of the device 100 can be made compact. Thewavelength converting section 120 may be also contact-arranged(laminated and arranged) on the excitation light output face of theplane light emitting laser array 110, and may be also arranged so as tobe separated from this excitation light output face. When the contactarrangement is set, it can be made more compact.

Further, the plane light emitting laser array 110 is adopted as theexcitation light generating section (excitation light source), andlongitudinal mode control of the excitation light is executed.Accordingly, a portion between the energy levels of rare earth ions ortransition metal ions added to the solid laser medium layer 121 can bedirectly excited. Accordingly, plural lights of different wavelengthscan be efficiently outputted.

The plane light emitting laser array 110 is adopted as the excitationlight generating section (excitation light source). Accordingly, if itis set to a construction for individually controlling the plane lightemitting laser array element 115, the light emitting intensities ofplural lights of different wavelengths can be also respectivelyadjusted.

It is also possible to adopt a construction in which the constructionshown in each of the first to third embodiment modes is combined withthe above construction. As shown in FIG. 8, it may be also set to aconstruction in which a reflecting film 128 for λ₀ for reflecting theexcitation light is formed on an output face corresponding to area 4 ofthe solid laser medium layer 121. In this case, operations and effectssimilar to those of the third embodiment mode can be expected. When asingle laser beam is outputted from area 4, the reflecting film 128 forλ₀ may be also formed on the reflecting film 129 for 4.

Further, as shown in FIG. 10, it is also possible to adopt aconstruction for laminating and arranging the wavelength convertinglayer 127 on the output face of the solid laser medium layer 121. Inthis case, operations and effects similar to those of the secondembodiment mode can be expected. FIG. 10 is an enlarged cross-sectionalview showing a modified example.

Further, this embodiment mode shows an example in which theYb:YAG(Y₃Al₅O₁₂) crystal is used as the constructional material of thesolid laser medium layer 121, and the second reflecting layers 122, 123are constructed so as to resonate light of wavelength λ₄ generated inexcitation and transition of the Yb ion. Namely, this embodiment modeshows a construction for outputting a single laser beam from area 4.However, the construction of the second reflecting layers 122, 123(reflecting films 124 to 126) shown in the first embodiment mode may bealso applied to area 4 in accordance with this embodiment mode. Thus,more kinds of lights of different wavelengths can be simultaneouslyoutputted.

Fifth Embodiment Mode

A fifth embodiment mode will next be explained on the basis of FIG. 11.FIG. 11 is an enlarged cross-sectional view showing the schematicconstruction of a multiple wavelength laser device 100 in accordancewith the fifth embodiment mode.

The multiple wavelength laser device 100 in accordance with the fifthembodiment mode is common to the multiple wavelength laser devices 100shown in the first to fourth embodiment modes in many portions.

As shown in FIG. 11, the multiple wavelength laser device 100 inaccordance with this embodiment mode is characterized in that themultiple wavelength laser device 100 is constructed so as to outputplural lights of different wavelengths by the arrangement of thewavelength converting section 120 with respect to the plane lightemitting laser array 110. Namely, the multiple wavelength laser device100 is characterized in that the multiple wavelength laser device 100has area 4 as a resonant area for arranging the wavelength convertingsection 120 on the plane light emitting laser array 110, and area 5 asan excitation light passing area for arranging no wavelength convertingsection 120.

In this embodiment mode, similar to the fourth embodiment mode, theYb:YAG(Y₃Al₅O₁₂) crystal is adopted as the constructional material ofthe solid laser medium layer 121, and the solid laser medium layer 121is selectively arranged on the plane light emitting laser array 110corresponding to area 4. The second reflecting layers 122, 123 areconstructed from a reflecting film 129 for λ₄ adjusted in thickness (thefilm thickness of each of the Al₂O₃ layer and the TiO₂ layer) so as tobe resonated at wavelength λ₄ generated by Yb. Thus, the wavelengthconverting section 120 is arranged in only one portion on the outputface of the plane light emitting laser array 110, and area 4 as theresonant area is constructed. An area for arranging no wavelengthconverting section 120 constitutes area 5 as the excitation lightpassing area.

Thus, in accordance with the multiple wavelength laser device 100 inthis embodiment mode, light of wavelength λ₄ resonated andlaser-oscillated by the second reflecting layers 122, 123 and theexcitation light of wavelength λ₀ can be simultaneously outputted.Namely, plural lights of different wavelengths can be simultaneouslyoutputted.

Further, one plane light emitting laser array 110 is set to theexcitation light generating section (excitation light source) and onesolid laser medium layer 121 is collectively excited, and plural lightsof different wavelengths can be simultaneously outputted in accordancewith the existence of the wavelength converting section 120.Accordingly, the physical constitution of the device 100 can be madecompact. The wavelength converting section 120 may be alsocontact-arranged (laminated and arranged) on the excitation light outputface of the plane light emitting laser array 110, and may be alsoarranged so as to be separated from this excitation light output face.When this contact arrangement is set, it can be made more compact.

Further, the plane light emitting laser array 110 is adopted as theexcitation light generating section (excitation light source), andlongitudinal mode control of the excitation light is executed.Accordingly, a portion between the energy levels of rare earth ions ortransition metal ions added to the solid laser medium layer 121 can bedirectly excited. Accordingly, plural lights of different wavelengthscan be efficiently outputted.

The plane light emitting laser array 110 is adopted as the excitationlight generating section (excitation light source). Accordingly, if itis set to a construction for individually controlling the plane lightemitting laser array element 115, the light emitting intensities ofplural lights of different wavelengths can be also respectivelyadjusted.

Further, the construction shown in each of the first to third embodimentmodes can be also combined with the above construction. As shown in FIG.11, it may be also set to a construction in which a reflecting film 128for λ₀ for reflecting the excitation light is formed on the output faceof the solid laser medium layer 121. In this case, operations andeffects similar to those of the third embodiment mode can be expected.When a single laser beam is outputted from area 4, the reflecting film128 for λ₀ may be also formed on the reflecting film 129 for λ₄.Further, a construction for laminating and arranging the wavelengthconverting layer 127 on the output face of the solid laser medium layer121 can be also adopted. In this case, operations and effects similar tothose of the second embodiment mode can be expected.

Further, this embodiment mode shows an example in which theYb:YAG(Y₃Al₅O₁₂) crystal is used as the constructional material of thesolid laser medium layer 121, and the second reflecting layers 122, 123are constructed so as to resonate light of wavelength λ₄ generated inexcitation and transition of the Yb ion. Namely, this embodiment modeshows a construction for outputting a single laser beam from area 4.However, the construction of the second reflecting layers 122, 123(reflecting films 124 to 126) shown in the first embodiment mode may bealso applied to area 4 in accordance with this embodiment mode. Thus,more kinds of lights of different wavelengths can be simultaneouslyoutputted.

Sixth Embodiment Mode

A sixth embodiment mode will next be explained on the basis of FIG. 12.FIG. 12 is an enlarged cross-sectional view showing the schematicconstruction of a multiple wavelength laser device 100 in accordancewith the sixth embodiment mode.

The multiple wavelength laser device 100 in accordance with the sixthembodiment mode is common to the multiple wavelength laser devices 100shown in the first to fifth embodiment modes in many portions.

The multiple wavelength laser device 100 in accordance with thisembodiment mode is characterized in that the plane light emitting laserelement 115 is respectively electrically independent, and isindividually constructed so as to be controlled. Namely, the multiplewavelength laser device 100 is characterized in that the multiplewavelength laser device 100 is constructed so as to adjust brightness oflight outputted from the device 100. When light outputted from thedevice 100 is synthesized, brightness and a color tone can be adjusted.

Concretely, the construction of the plane light emitting laser array 110and the construction of the wavelength converting section 120 aresimilar to a combination of the first to third embodiment modes, and areset so as to output lights having wavelengths λ₅, λ₆, λ₇ within rangesof 450 to 475 nm (blue color), 520 to 533 nm (green color) and 650 to675 nm (red color) as visible light. Namely, this light can be utilizedas a light source for RGB.

Further, plural plane light emitting laser elements 115 are arrangedcorrespondently to respective areas 1 to 3 for outputting lights ofdifferent wavelengths. Thus, a predetermined desirable laser beam outputcan be easily secured by arranging the plural plane light emitting laserelements 115 correspondingly to one area. Further, the plane lightemitting laser elements 115 are respectively constructed so as to beindependently operated and controlled (p-type electrodes 117 areinsulated and separated every element 115). The device 100 includes anunillustrated light emitting control means for controlling lightemission timing (light emission on and off and light emission time) ofeach plane light emitting laser element 115.

Thus, in accordance with the multiple wavelength laser device 100 inthis embodiment mode, brightness of each color can be adjusted bycontrolling a light emitting number (i.e., light emission on and off ofeach plane light emitting laser element 115) of the plane light emittinglaser element 115 in each of areas 1 to 3 by the light emitting controlmeans. Further, when each color is synthesized, the brightness and thecolor tone of synthesized light can be adjusted. Similar effects can bealso expected by controlling the light emission time. It may be also setto a construction for controlling both the light emission number and thelight emission time.

No control method using the light emitting control means is particularlylimited. For example, it may be also set to a construction in which thelight emitting control means controls the light emission timing of eachplane light emitting laser element 115 so as to hold predetermineddesirable brightness and color tone on the basis of a signal from asensor (e.g., a sensor for detecting light outputted from the device100) for measuring a physical amount. Further, the light emission timingof each plane light emitting laser element 115 may be also controlled inaccordance with a program stored in advance.

Further, no light as a controlled object is limited to visible light. Itmay be also set to a construction in which no wavelength convertingsection 120 includes the wavelength converting layer 127. Further, itmay be also set to a construction including no reflecting film 128 forλ₀. The construction in accordance with this embodiment mode may be alsocombined with the fourth and fifth embodiment modes. In this case, theoperation of the plane light emitting laser element 115 corresponding tothe excitation light outputted to the exterior can be also similarlycontrolled.

Seventh Embodiment Mode

A seventh embodiment mode will next be explained on the basis of FIG.13. FIG. 13 is an enlarged cross-sectional view showing the schematicconstruction of a multiple wavelength laser device 100 in accordancewith the seventh embodiment mode.

The multiple wavelength laser device 100 in accordance with the seventhembodiment mode is common to the multiple wavelength laser devices 100shown in the first to sixth embodiment modes in many portions.

As shown in FIG. 13, the multiple wavelength laser device 100 inaccordance with this embodiment mode is characterized in that themultiple wavelength laser device 100 includes an optical element for anadjustment arranged on at least the output face of the wavelengthconverting section 120 and constructed so as to adjust an outputdirection of output light to the exterior. Namely, the multiplewavelength laser device 100 is characterized in that the multiplewavelength laser device 100 is constructed so as to control the outputdirection of a laser beam outputted from the device 100.

Concretely, for example, with respect to the construction shown in thesixth embodiment mode, a micro mirror array 130 including unillustratedplural micro mirrors of an electrostatic driving type formed in asemiconductor substrate by MEMS is adopted as the optical element for anadjustment arranged on the output face of the wavelength convertingsection 120. For example, the micro mirror is formed correspondingly toeach plane light emitting laser element 115. The aperture (the size of asubstrate planar direction) of each plane light emitting laser element115 constituting the above plane light emitting laser array 110 isseveral μm to several hundred μm. The size of the wavelength convertingsection 120 corresponding to this aperture can be set to 1 mm or lesseven in consideration of a spread of the excitation light. Accordingly,the micro mirror array 130 formed by MEMS can be adopted. For example,such a micro mirror is disclosed in JP-A-2005-321663, etc.

In this embodiment mode, as shown in FIG. 13, the micro mirror array 130is arranged so as to come in contact with the output face of thewavelength converting section 120. However, the micro mirror array 130may be also arranged so as to be separated from this output face.Further, each micro mirror constituting the micro mirror array 130 isrespectively constructed so as to be independently operated. The device100 includes an unillustrated angle control means for controlling theoperation (an angle with respect to the substrate plane) of each micromirror.

Thus, in accordance with the multiple wavelength laser device 100 inthis embodiment mode, the angle of each micro mirror constituting themicro mirror array 130 can be adjusted by the angle control means.Accordingly, the output direction and the brightness of each color ineach of areas 1 to 3 can be adjusted. Further, when each color issynthesized, the output direction, the brightness and the color tone ofsynthesized light can be adjusted.

No control method using the angle control means is particularly limited.For example, it may be also set to a construction in which the anglecontrol means controls the angle of each micro mirror so as to holdpredetermined desirable brightness and color tone on the basis of asignal from a sensor (e.g., a sensor for detecting light outputted fromthe device 100) for measuring a physical amount. Further, the angle ofeach micro mirror may be also controlled along a program stored inadvance.

Further, the construction in accordance with this embodiment mode may bealso combined with the fourth and fifth embodiment modes. For example,the output direction of the excitation light outputted to the exteriorcan be also controlled by the optical element for an adjustment.

Further, this embodiment mode shows an example of the micro mirror array130 as an example of the optical element for an adjustment. However,this optical element is not limited to the above micro mirror array 130,but may be set to an element able to adjust the output direction oflight outputted to the exterior.

While the invention has been described with reference to preferredembodiments thereof, it is to be understood that the invention is notlimited to the preferred embodiments and constructions. The invention isintended to cover various modification and equivalent arrangements. Inaddition, while the various combinations and configurations, which arepreferred, other combinations and configurations, including more, lessor only a single element, are also within the spirit and scope of theinvention.

1. A laser equipment for outputting a plurality of output lights havingdifferent wavelengths, comprising: a substrate; an excitation lightgeneration element for emitting a plurality of excitation lights,wherein the excitation light generation element includes a plurality ofsurface emitting laser elements having a pair of first reflection layersand an activation layer disposed between the pair of first reflectionlayers, and wherein the surface emitting laser elements are disposed onthe substrate so that the surface emitting laser elements provide asurface emitting laser array; and a light converter having a pair ofsecond reflection layers and a solid laser medium layer disposed betweenthe pair of second reflection layers, wherein the pair of secondreflection layers and the solid laser medium layer provide a resonator,wherein the solid laser medium layer is capable of generating aplurality of lights having different peak wavelengths by receiving theexcitation lights, and the light converter is disposed on an outputsurface of the excitation light generation element.
 2. The equipmentaccording to claim 1, wherein the light converter outputs the outputlights, each wavelength of the output light is different from awavelength of the excitation light, the resonator is divided into aplurality of resonator regions according to a structure of the secondreflection layers, and the resonator regions are capable of resonatingat different peak wavelengths of the output lights, respectively.
 3. Theequipment according to claim 2, wherein the pair of second reflectionlayers includes an output side second reflection layer and an input sidesecond reflection layer, the output side second reflection layerincludes a plurality of reflection films, each of which has a maximumreflectivity at the peak wavelength of the corresponding output light,the reflection films in the output side second reflection layer arestacked from the solid laser medium layer in a predetermined output sideorder of peak wavelengths, the input side second reflection layerincludes a plurality of reflection films, each of which has a maximumreflectivity at the peak wavelength of the corresponding output light,the reflection films in the input side second reflection layer arestacked from the solid laser medium layer in an input side order of peakwavelengths, which is opposite to the output side order, and an utmostouter reflection film of the stacked reflection films of the output sidesecond reflection layer in each resonator region has a maximumreflectivity at a peak wavelength of the corresponding output light ofthe resonator region, the peak wavelength of which is equal to a peakwavelength of an utmost outer reflection film of the stacked reflectionfilms of the input side second reflection layer in the resonator region.4. The equipment according to claim 3, wherein each reflection filmincludes two different refraction index layers, each differentrefraction index layer has a thickness, a refraction index, and acorresponding peak wavelength of the output light, and the thickness ofone different refraction index layer in one of the reflection films isequal to the corresponding peak wavelength divided by four times of therefraction index.
 5. The equipment according to claim 3, wherein one ofthe reflection films has a corresponding peak wavelength of the outputlight defined as λ1 and a reflection bandwidth defined as Δ1, anotherone of the reflection films has another corresponding peak wavelength ofthe output light defined as λ2 and another reflection bandwidth definedas Δ2, the peak wavelengths of λ1 and λ2 and the reflection bandwidthsof Δ1 and Δ2 satisfy relationships of |λ₁−λ₂|>Δ1/2 and |λ₁−λ₂|>Δ2/2. 6.The equipment according to claim 2, wherein the solid laser medium layeris made of a host crystal having a neodymium atom.
 7. The equipmentaccording to claim 6, wherein the activation layer in each surfaceemitting laser element includes a quantum well layer made ofAl_(x1)In_(y1)Ga_(1-x1-y1)As.
 8. The equipment according to claim 6,wherein the activation layer in each surface emitting laser elementincludes a quantum well layer made of In_(x2)Ga_(1-x2)As_(y2)P_(1-y2).9. The equipment according to claim 1, wherein the light converteroutputs the output lights, and the resonator is divided into a firstresonator having the second reflection layers and a second resonatorhaving no second reflection layer.
 10. The equipment according to claim9, wherein the solid laser medium layer is made of a host crystal havinga neodymium atom or a ytterbium atom.
 11. The equipment according toclaim 9, wherein the first resonator is divided into a plurality ofresonator regions according to a structure of the second reflectionlayers, and the resonator regions are capable of resonating at differentpeak wavelengths of the output lights, respectively.
 12. The equipmentaccording to claim 11, wherein the pair of second reflection layersincludes an output side second reflection layer and an input side secondreflection layer, the output side second reflection layer includes aplurality of reflection films, each of which has a maximum reflectivityat the peak wavelength of the corresponding output light, the reflectionfilms in the output side second reflection layer are stacked from thesolid laser medium layer in a predetermined output side order of peakwavelengths, the input side second reflection layer includes a pluralityof reflection films, each of which has a maximum reflectivity at thepeak wavelength of the corresponding output light, the reflection filmsin the input side second reflection layer are stacked from the solidlaser medium layer in an input side order of peak wavelengths, which isopposite to the output side order, and an utmost outer reflection filmof the stacked reflection films of the output side second reflectionlayer in each resonator region has a maximum reflectivity at a peakwavelength of the corresponding output light of the resonator region,the peak wavelength of which is equal to a peak wavelength of an utmostouter reflection film of the stacked reflection films of the input sidesecond reflection layer in the resonator region.
 13. The equipmentaccording to claim 12, wherein each reflection film includes twodifferent refraction index layers, each different refraction index layerhas a thickness, a refraction index, and a corresponding peak wavelengthof the output light, and the thickness of one different refraction indexlayer in one of the reflection films is equal to the corresponding peakwavelength divided by four times of the refraction index.
 14. Theequipment according to claim 12, wherein one of the reflection films hasa corresponding peak wavelength of the output light defined as λ1 and areflection bandwidth defined as Δ1, another one of the reflection filmshas another corresponding peak wavelength of the output light defined asλ2 and another reflection bandwidth defined as λ2, the peak wavelengthsof λ1 and λ2 and the reflection bandwidths of λ1 and λ2 satisfyrelationships of |λ₁−λ₂|>Δ1/2 and |λ₄−λ₂|>Δ2/2.
 15. The equipmentaccording to claim 11, wherein the solid laser medium layer is made of ahost crystal having a neodymium atom.
 16. The equipment according toclaim 1, wherein the light converter is disposed on a part of the outputsurface of the excitation light generation element.
 17. The equipmentaccording to claim 16, wherein the solid laser medium layer is made of ahost crystal having a neodymium atom.
 18. The equipment according toclaim 16, wherein the resonator is divided into a plurality of resonatorregions according to a structure of the second reflection layers, andthe resonator regions are capable of resonating at different peakwavelengths of the output lights, respectively.
 19. The equipmentaccording to claim 1, wherein the pair of second reflection layersincludes an output side second reflection layer and an input side secondreflection layer, the light converter further includes a thirdreflection layer, which is disposed between the solid laser medium layerand the output side second reflection layer, and the third reflectionlayer has a predetermined reflectivity at a wavelength of eachexcitation light.
 20. The equipment according to claim 1, wherein thepair of second reflection layers includes an output side secondreflection layer and an input side second reflection layer, the lightconverter further includes a wavelength converting layer, which isdisposed between the solid laser medium layer and the output side secondreflection layer, and the wavelength converting layer converts awavelength of each light generated in the solid laser medium layer. 21.The equipment according to claim 20, wherein the wavelength convertinglayer is made of non-linear crystal for generating a second harmoniclight of the peak wavelength of each output light.
 22. The equipmentaccording to claim 1, wherein the surface emitting laser elements areindependently and electrically controlled, respectively.
 23. Theequipment according to claim 1, further comprising: an optical devicefor controlling output directions of the output lights from the lightconverter, wherein the optical device is disposed on an output side ofthe light converter.